@inproceedings{cbbde69fd09849c18b9996b70a3b23ad,
title = "New non-volatile memory with magnetic nano-dots",
abstract = "We proposed a new non-volatile memory with magnetic nanodots (MND) dispersed in an insulating film as charge retention layer. We evaluated fundamental characteristics of FePt magnetic nano-dot film which is employed in such new magnetic nano-dot memory. We successfully formed a highly ordered L10 phase face-centered tetragonal structured FePt nano-dot (< 4.2nm) films on Si3N4 (5nm)/SiO2 (10nm)/silicon substrates and SiO2(10nm)/ silicon substrate by using SAND method. The uniformity of FePt particle size is dramatically improved by introducing a Si3N4 buffer layer on SiO2/Si substrate. In addition, it is found that FePt nano-dot film formed on Si3N 4(5nm)/SiO2(10nm)/Si substrate has a large coerce-ivity of ∼22 kOe at room temperature. Copyright The Electrochemical Society.",
author = "Mitsumasa Koyanagi and Bea, {J. C.} and Yin, {C. K.} and Takafumi Fukushima and Tetsu Tanaka",
year = "2006",
language = "English",
isbn = "1566774381",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "209--215",
booktitle = "Dielectrics for Nanosystems II",
edition = "1",
note = "2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society ; Conference date: 07-05-2006 Through 12-05-2006",
}