For the purpose of realizing a new intelligent system using mixed signal technology and its simplified VLSI implementation, we develop two new nonvolatile analog memories called "DTSDAM (dual tunnel SDAM)" and "FBSDAM (SDAM with feedback circuit)" based on "SDAM (switched diffusion analog memory)". We fabricate these two analog memories using the 4 μm double-poly double-metal silicon technology developed for nonvolatile analog memories. We report the measurement results for the fabricated chips and estimate the performance of these new analog memories.
- Fowler-nordheim tunneling
- Nonvolatile analog memory