New oxide phase with wide band gap and high electroconductivity, MgIn 2O4

Naoyuki Ueda; Takahisa Omata; Naoko Hikuma; Kazushige Ueda; Hiroshi Mizoguchi; Takuya Hashimoto; Hiroshi Kawazoe

doi:10.1063/1.108374

New oxide phase with wide band gap and high electroconductivity, MgIn ₂O₄

Naoyuki Ueda, Takahisa Omata, Naoko Hikuma, Kazushige Ueda, Hiroshi Mizoguchi, Takuya Hashimoto, Hiroshi Kawazoe

IMRAM - Center for Mineral Processing and Metallurgy (CMPM)

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

127 Citations (Scopus)

Abstract

It was demonstrated that the MgIn₂O₄ spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn₂O ₄ (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn₂O ₄ at room temperature has reached almost 10² S cm ^-1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.

Original language	English
Pages (from-to)	1954-1955
Number of pages	2
Journal	Applied Physics Letters
Volume	61
Issue number	16
DOIs	https://doi.org/10.1063/1.108374
Publication status	Published - 1992

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10.1063/1.108374

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@article{74fac487c6a048d7b84b4d58ce1f5955,

title = "New oxide phase with wide band gap and high electroconductivity, MgIn 2O4",

abstract = "It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O 4 (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O 4 at room temperature has reached almost 102 S cm -1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.",

author = "Naoyuki Ueda and Takahisa Omata and Naoko Hikuma and Kazushige Ueda and Hiroshi Mizoguchi and Takuya Hashimoto and Hiroshi Kawazoe",

year = "1992",

doi = "10.1063/1.108374",

language = "English",

volume = "61",

pages = "1954--1955",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - New oxide phase with wide band gap and high electroconductivity, MgIn 2O4

AU - Ueda, Naoyuki

AU - Omata, Takahisa

AU - Hikuma, Naoko

AU - Ueda, Kazushige

AU - Mizoguchi, Hiroshi

AU - Hashimoto, Takuya

AU - Kawazoe, Hiroshi

PY - 1992

Y1 - 1992

N2 - It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O 4 (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O 4 at room temperature has reached almost 102 S cm -1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.

AB - It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O 4 (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O 4 at room temperature has reached almost 102 S cm -1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.

UR - http://www.scopus.com/inward/record.url?scp=21544449791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544449791&partnerID=8YFLogxK

U2 - 10.1063/1.108374

DO - 10.1063/1.108374

M3 - Article

AN - SCOPUS:21544449791

SN - 0003-6951

VL - 61

SP - 1954

EP - 1955

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

New oxide phase with wide band gap and high electroconductivity, MgIn ₂O₄

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