New paradigm of silicon technology

Tadahiro Ohmi; Shigetoshi Sugawa; Koji Kotani; Masaki Htrayama; Akihiro Morimoto

doi:10.1109/5.915381

New paradigm of silicon technology

Tadahiro Ohmi, Shigetoshi Sugawa, Koji Kotani, Masaki Htrayama, Akihiro Morimoto

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We present a new paradigm of Si technologies to establish a gigahertz-operation gigascaie Integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high-speed signal propagation properties in the practical LSI structure, a gas-isolated-inlerconnect high-k gate dielectric metal-gate metal-substrate silicon-on-insulator (SOI) LSI structure is proposed as a possible solution for a future gigahertz CSI system LSI, where the clock rate is improved up to beyond 10 GHz and the minimum feature size is reduced down to 0.035 /im with keeping a continuous progress of the LSI's speed performance. Perfect scientific manufacturing free from fluctuations consisting of total low-temperature high-quality and high-speed processes based on very high-density plasma having very low electron temperatures is essential to realize them.

Original language	English
Pages (from-to)	394-411
Number of pages	18
Journal	Proceedings of the IEEE
Volume	89
Issue number	3
DOIs	https://doi.org/10.1109/5.915381
Publication status	Published - 2001

Keywords

Gas-isolated interconnect
Gigahertz operation
Gigascale integration
High-density plasma
Low-temperature high-quality and high-speed processing
Metal-substrate soi
Perfect scientific manufacturing free from fluctuations

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10.1109/5.915381

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abstract = "We present a new paradigm of Si technologies to establish a gigahertz-operation gigascaie Integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high-speed signal propagation properties in the practical LSI structure, a gas-isolated-inlerconnect high-k gate dielectric metal-gate metal-substrate silicon-on-insulator (SOI) LSI structure is proposed as a possible solution for a future gigahertz CSI system LSI, where the clock rate is improved up to beyond 10 GHz and the minimum feature size is reduced down to 0.035 /im with keeping a continuous progress of the LSI's speed performance. Perfect scientific manufacturing free from fluctuations consisting of total low-temperature high-quality and high-speed processes based on very high-density plasma having very low electron temperatures is essential to realize them.",

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AU - Sugawa, Shigetoshi

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AU - Htrayama, Masaki

AU - Morimoto, Akihiro

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New paradigm of silicon technology

Abstract

Keywords

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