New photoresist for high resolution two-layer resist systems

Akinobu Tanaka, Masao Morita, Katsuhide Onose

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D0.5=40 mJ/cm2, and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 /μm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.

Original languageEnglish
Pages (from-to)L112-L114
JournalJapanese journal of applied physics
Issue number2
Publication statusPublished - 1985 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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