TY - JOUR
T1 - New photoresist for high resolution two-layer resist systems
AU - Tanaka, Akinobu
AU - Morita, Masao
AU - Onose, Katsuhide
PY - 1985/2
Y1 - 1985/2
N2 - We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D0.5=40 mJ/cm2, and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 /μm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.
AB - We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350-450 nm), D0.5=40 mJ/cm2, and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 /μm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.
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U2 - 10.1143/JJAP.24.L112
DO - 10.1143/JJAP.24.L112
M3 - Article
AN - SCOPUS:0022011575
SN - 0021-4922
VL - 24
SP - L112-L114
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2
ER -