New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

Kazuhiro Nishikawa; Masakiyo Tsunoda; Satoshi Ogata; Migaku Takahashi

New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

Kazuhiro Nishikawa, Masakiyo Tsunoda, Satoshi Ogata, Migaku Takahashi

Research Center for Green X-Tech

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Fabrication of insulating barrier in ferromagnetic tunnel junctions was carried out using new plasma source. The tunneling barrier is the most improtant factor for magnetic tunnel junctions (MTJ). The results showed that loosely bonded oxygen in as-deposited MTJ easily diffuse in the barrier layer to form a tightly bonded stoichiometric Al₂O₃ during thermal annealing.

Original language	English
Pages (from-to)	DE11
Journal	Digests of the Intermag Conference
Publication status	Published - 2002
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Cite this

@article{20ffed0775b549879e110985bfcfad97,

title = "New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions",

abstract = "Fabrication of insulating barrier in ferromagnetic tunnel junctions was carried out using new plasma source. The tunneling barrier is the most improtant factor for magnetic tunnel junctions (MTJ). The results showed that loosely bonded oxygen in as-deposited MTJ easily diffuse in the barrier layer to form a tightly bonded stoichiometric Al2O3 during thermal annealing.",

author = "Kazuhiro Nishikawa and Masakiyo Tsunoda and Satoshi Ogata and Migaku Takahashi",

year = "2002",

language = "English",

pages = "DE11",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - JOUR

T1 - New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

AU - Nishikawa, Kazuhiro

AU - Tsunoda, Masakiyo

AU - Ogata, Satoshi

AU - Takahashi, Migaku

PY - 2002

Y1 - 2002

N2 - Fabrication of insulating barrier in ferromagnetic tunnel junctions was carried out using new plasma source. The tunneling barrier is the most improtant factor for magnetic tunnel junctions (MTJ). The results showed that loosely bonded oxygen in as-deposited MTJ easily diffuse in the barrier layer to form a tightly bonded stoichiometric Al2O3 during thermal annealing.

AB - Fabrication of insulating barrier in ferromagnetic tunnel junctions was carried out using new plasma source. The tunneling barrier is the most improtant factor for magnetic tunnel junctions (MTJ). The results showed that loosely bonded oxygen in as-deposited MTJ easily diffuse in the barrier layer to form a tightly bonded stoichiometric Al2O3 during thermal annealing.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036912693&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036912693

SN - 0074-6843

SP - DE11

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -

New plasma source with low electron temperature for fabrication of insulating barrier in ferromagnetic tunnel junctions

Abstract

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