New ram-bus memory system with interchip optical interconnection

Kouji Miyake; Tsuyoshi Tanaka; Takeshi Etoh; Morikazu Tsuno; Shin Yokoyama; Mitsumasa Koyanagi

doi:10.1143/JJAP.33.848

New ram-bus memory system with interchip optical interconnection

Kouji Miyake, Tsuyoshi Tanaka, Takeshi Etoh, Morikazu Tsuno, Shin Yokoyama, Mitsumasa Koyanagi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A new optical RAM-bus (ORAM-bus) memory system has been proposed. The ORAM-bus memory has a number of optical interconnections to connect many memory chips. Data transfer using the guided optical interconnections is performed through the optical coupling flip-flop (OC-FF) circuit of the optical coupling sense amplifiers. The ORAM-bus memory test chips were fabricated using 2 μm complementary metal-oxide-semiconductor (CMOS) technology. The light-emitting diodes (LEDs) were successfully bonded onto the silicon test chips using the newly developed microbonding technology. The optical writing operation for ORAM-bus memory was demonstrated using the test chip.

Original language	English
Pages (from-to)	848-851
Number of pages	4
Journal	Japanese journal of applied physics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.33.848
Publication status	Published - 1994
Externally published	Yes

Keywords

LED
Microbonding
ORAM-bus memory
Optical interconnection
Optical writing
Photodetector

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.33.848

Cite this

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title = "New ram-bus memory system with interchip optical interconnection",

abstract = "A new optical RAM-bus (ORAM-bus) memory system has been proposed. The ORAM-bus memory has a number of optical interconnections to connect many memory chips. Data transfer using the guided optical interconnections is performed through the optical coupling flip-flop (OC-FF) circuit of the optical coupling sense amplifiers. The ORAM-bus memory test chips were fabricated using 2 μm complementary metal-oxide-semiconductor (CMOS) technology. The light-emitting diodes (LEDs) were successfully bonded onto the silicon test chips using the newly developed microbonding technology. The optical writing operation for ORAM-bus memory was demonstrated using the test chip.",

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year = "1994",

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AU - Miyake, Kouji

AU - Tanaka, Tsuyoshi

AU - Etoh, Takeshi

AU - Tsuno, Morikazu

AU - Yokoyama, Shin

AU - Koyanagi, Mitsumasa

PY - 1994

Y1 - 1994

N2 - A new optical RAM-bus (ORAM-bus) memory system has been proposed. The ORAM-bus memory has a number of optical interconnections to connect many memory chips. Data transfer using the guided optical interconnections is performed through the optical coupling flip-flop (OC-FF) circuit of the optical coupling sense amplifiers. The ORAM-bus memory test chips were fabricated using 2 μm complementary metal-oxide-semiconductor (CMOS) technology. The light-emitting diodes (LEDs) were successfully bonded onto the silicon test chips using the newly developed microbonding technology. The optical writing operation for ORAM-bus memory was demonstrated using the test chip.

AB - A new optical RAM-bus (ORAM-bus) memory system has been proposed. The ORAM-bus memory has a number of optical interconnections to connect many memory chips. Data transfer using the guided optical interconnections is performed through the optical coupling flip-flop (OC-FF) circuit of the optical coupling sense amplifiers. The ORAM-bus memory test chips were fabricated using 2 μm complementary metal-oxide-semiconductor (CMOS) technology. The light-emitting diodes (LEDs) were successfully bonded onto the silicon test chips using the newly developed microbonding technology. The optical writing operation for ORAM-bus memory was demonstrated using the test chip.

KW - LED

KW - Microbonding

KW - ORAM-bus memory

KW - Optical interconnection

KW - Optical writing

KW - Photodetector

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New ram-bus memory system with interchip optical interconnection

Abstract

Keywords

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