TY - GEN
T1 - New semiconductor materials and devices for terahertz imaging and sensing
AU - Otsuji, T.
AU - Watanabe, T.
AU - Akagawa, K.
AU - Tanimoto, Y.
AU - Boubanga Tombet, S.
AU - Suemitsu, T.
AU - Coquillat, D.
AU - Knap, W.
AU - Chan, S.
AU - Ryzhii, V.
PY - 2011
Y1 - 2011
N2 - Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.
AB - Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.
UR - http://www.scopus.com/inward/record.url?scp=84863042623&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863042623&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2011.6127001
DO - 10.1109/ICSENS.2011.6127001
M3 - Conference contribution
AN - SCOPUS:84863042623
SN - 9781424492886
T3 - Proceedings of IEEE Sensors
SP - 44
EP - 47
BT - IEEE Sensors 2011 Conference, SENSORS 2011
T2 - 10th IEEE SENSORS Conference 2011, SENSORS 2011
Y2 - 28 October 2011 through 31 October 2011
ER -