New statistical evaluation method for the variation of metal-oxide- semiconductor field-effect transistors

Evaluating the statistical variation of the metal-oxide-semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation method for the statistical variation of the electrical characteristics of MOSFETs is presented. We have developed the test circuit for understanding the statistical and local variation of MOSFET in very short time. It is demonstrated that a large number of MOSFETs, about 30,000 MOSFETs, are measured in very short time of 0.05 s, and that the measured results are very useful to develop the process technology to reduce the statistical and local characteristic variation.