New synthetic method of forming aluminum oxynitride by plasma arc melting

Hiroyuki Fukuyama, Wataru Nakao, Masahiro Susa, Kazuhiro Nagata

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


A new synthetic method of forming the γ-phase of aluminum oxynitride (alon) has been proposed. alon has been successfully synthesized by the DC nitrogen plasma arc using α-Al2O3 and AlN as starting materials. Alon rapidly forms in a liquid state under thermal plasma. The obtained lattice parameter of alon has been determined as a function of the concentration of Al2O3. Evaporation takes place during arc melting. The condensed alon from the vapor consists of nanoscale-sized spherical particles, and these particles are in single crystals. The evaporation mechanism of alon during arc melting is discussed. Thus, arc plasma processing is a promising method for synthesizing alon and producing the ultrafine powder.

Original languageEnglish
Pages (from-to)1381-1387
Number of pages7
JournalJournal of the American Ceramic Society
Issue number6
Publication statusPublished - 1999


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