A new synthetic method of forming the γ-phase of aluminum oxynitride (alon) has been proposed. alon has been successfully synthesized by the DC nitrogen plasma arc using α-Al2O3 and AlN as starting materials. Alon rapidly forms in a liquid state under thermal plasma. The obtained lattice parameter of alon has been determined as a function of the concentration of Al2O3. Evaporation takes place during arc melting. The condensed alon from the vapor consists of nanoscale-sized spherical particles, and these particles are in single crystals. The evaporation mechanism of alon during arc melting is discussed. Thus, arc plasma processing is a promising method for synthesizing alon and producing the ultrafine powder.
|Number of pages||7|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1999|