New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO2 and la2O 3 dielectric interfaces

Kenji Shiraishi; Takashi Nakayama; Yasushi Akasaka; Seiichi Miyazaki; Takashi Nakaoka; Kenji Ohmori; Parhat Ahmet; Kazuyoshi Torii; Heiji Watanabe; Toyohiro Chikyow; Yasuo Nara; Hiroshi Iwai; Keisaku Yamada

New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces

Kenji Shiraishi, Takashi Nakayama, Yasushi Akasaka, Seiichi Miyazaki, Takashi Nakaoka, Kenji Ohmori, Parhat Ahmet, Kazuyoshi Torii, Heiji Watanabe, Toyohiro Chikyow, Yasuo Nara, Hiroshi Iwai, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have constructed a universal theory of the work functions at metal/high-k HfO₂ and La₂O₃ dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La₂O₃ based on this new concept. Copyright The Electrochemical Society.

Original language	English
Title of host publication	Dielectrics for Nanosystems II
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Publisher	Electrochemical Society Inc.
Pages	25-40
Number of pages	16
Edition	1
ISBN (Electronic)	1566774381
ISBN (Print)	1566774381, 9781566774383
Publication status	Published - 2006
Externally published	Yes
Event	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	ECS Transactions
Number	1
Volume	2
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country/Territory	United States
City	Denver, CO
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Engineering(all)

Cite this

Shiraishi, K., Nakayama, T., Akasaka, Y., Miyazaki, S., Nakaoka, T., Ohmori, K., Ahmet, P., Torii, K., Watanabe, H., Chikyow, T., Nara, Y., Iwai, H., & Yamada, K. (2006). New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pp. 25-40). (ECS Transactions; Vol. 2, No. 1). Electrochemical Society Inc..

New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. / Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi et al.
Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1. ed. Electrochemical Society Inc., 2006. p. 25-40 (ECS Transactions; Vol. 2, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiraishi, K, Nakayama, T, Akasaka, Y, Miyazaki, S, Nakaoka, T, Ohmori, K, Ahmet, P, Torii, K, Watanabe, H, Chikyow, T, Nara, Y, Iwai, H & Yamada, K 2006, New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. in Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 edn, ECS Transactions, no. 1, vol. 2, Electrochemical Society Inc., pp. 25-40, 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 06/5/7.

Shiraishi K, Nakayama T, Akasaka Y, Miyazaki S, Nakaoka T, Ohmori K et al. New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 ed. Electrochemical Society Inc. 2006. p. 25-40. (ECS Transactions; 1).

Shiraishi, Kenji ; Nakayama, Takashi ; Akasaka, Yasushi et al. / New theory of effective work functions at metal/high-k dielectric interfaces-application to metal/high-k HfO₂ and la₂O ₃ dielectric interfaces. Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1. ed. Electrochemical Society Inc., 2006. pp. 25-40 (ECS Transactions; 1).

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abstract = "We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-band-edge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept. Copyright The Electrochemical Society.",

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AU - Miyazaki, Seiichi

AU - Nakaoka, Takashi

AU - Ohmori, Kenji

AU - Ahmet, Parhat

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