TY - JOUR
T1 - New two-dimensional phase of tin chalcogenides
T2 - Candidates for high-performance thermoelectric materials
AU - Dong, Baojuan
AU - Wang, Zhenhai
AU - Hung, Nguyen T.
AU - Oganov, Artem R.
AU - Yang, Teng
AU - Saito, Riichiro
AU - Zhang, Zhidong
N1 - Funding Information:
This work is supported by the National Key R&D Program of China (2017YFA0206301) and the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China (No. U1537204). A.R.O. and B.J.D. thank the Russian Science Foundation (Grant No. 16-13-10459). R.S. acknowledges JSPS KAKENHI Grants No. JP25107005, No. JP25286005, No. JP15K21722, and No. JP18H01810. N.T.H. acknowledges JSPS KAKENHI Grant No. JP18J10151. Z.H.W. thanks the National Science Foundation of China (Grant No. 11604159). Calculations were performed on XSEDE facilities and on the cluster of the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the DOE-BES under Contract No. DE-AC02-98CH10086. This work has been carried out using the Rurik supercomputer, the Arkuda supercomputer of Skolkovo Foundation, and computing resources of the federal collective usage center Complex for Simulation and Data Processing for Mega-science Facilities at NRC Kurchatov Institute.
Funding Information:
This work is supported by the National Key R&D Program of China (2017YFA0206301) and the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China (No. U1537204). A.R.O. and B.J.D. thank the Russian Science Foundation (Grant No. 16-13-10459). R.S. acknowledges JSPS KAKENHI Grants No. JP25107005, No. JP25286005, No. JP15K21722, and No. JP18H01810. N.T.H. acknowledges JSPS KAKENHI Grant No. JP18J10151. Z.H.W. thanks the National Science Foundation of China (Grant No. 11604159). Calculations were performed on XSEDE facilities and on the cluster of the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the DOE-BES under Contract No. DE-AC02-98CH10086. This work has been carried out using the Rurik supercomputer, the Arkuda supercomputer of Skolkovo Foundation, and computing resources of the federal collective usage center Complex for Simulation and Data Processing for Mega-science Facilities at NRC Kurchatov Institute.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/1/11
Y1 - 2019/1/11
N2 - Tin-chalcogenides SnX (X=Te, Se, and S) have been attracting research interest due to their thermoelectric physical properties. Their two-dimensional (2D) counterparts, which are expected to enhance those properties, nevertheless have not been fully explored because of many possible structures. A variable-composition exploration of 2D Sn1-xXx systems (X=Te, Se, and S) has been performed using a global searching method based on an evolutionary algorithm combined with density-functional calculations. A new hexagonal phase denoted by β′-SnX is found using Universal Structure Predictor: Evolutionary Xtallography (USPEX), and the structural stability has been further checked by calculations of phonons and elasticity. β′-SnTe is the most stable among all possible 2D phases of SnTe, including experimentally available phases. Further, β′ phases of SnSe and SnS are also found to be energetically close to the most stable phases. A high thermoelectronic (TE) performance has been predicted in the β′-SnX phases, which have a dimensionless figure of merit as high as ∼0.96 to 3.81 for SnTe, ∼0.93 to 2.51 for SnSe, and ∼1.19 to 3.18 for SnS at temperatures ranging from 300 to 900 K with a practically attainable carrier concentration of 5×1012cm-2. The high TE performance results from a high power factor that is attributed to the quantum confinement of 2D materials and the band convergence near the Fermi level, as well as low thermal conductivity mainly from both low elastic constants due to weak inter-Sn bonding strength and strong lattice anharmonicity.
AB - Tin-chalcogenides SnX (X=Te, Se, and S) have been attracting research interest due to their thermoelectric physical properties. Their two-dimensional (2D) counterparts, which are expected to enhance those properties, nevertheless have not been fully explored because of many possible structures. A variable-composition exploration of 2D Sn1-xXx systems (X=Te, Se, and S) has been performed using a global searching method based on an evolutionary algorithm combined with density-functional calculations. A new hexagonal phase denoted by β′-SnX is found using Universal Structure Predictor: Evolutionary Xtallography (USPEX), and the structural stability has been further checked by calculations of phonons and elasticity. β′-SnTe is the most stable among all possible 2D phases of SnTe, including experimentally available phases. Further, β′ phases of SnSe and SnS are also found to be energetically close to the most stable phases. A high thermoelectronic (TE) performance has been predicted in the β′-SnX phases, which have a dimensionless figure of merit as high as ∼0.96 to 3.81 for SnTe, ∼0.93 to 2.51 for SnSe, and ∼1.19 to 3.18 for SnS at temperatures ranging from 300 to 900 K with a practically attainable carrier concentration of 5×1012cm-2. The high TE performance results from a high power factor that is attributed to the quantum confinement of 2D materials and the band convergence near the Fermi level, as well as low thermal conductivity mainly from both low elastic constants due to weak inter-Sn bonding strength and strong lattice anharmonicity.
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U2 - 10.1103/PhysRevMaterials.3.013405
DO - 10.1103/PhysRevMaterials.3.013405
M3 - Article
AN - SCOPUS:85060644692
SN - 2475-9953
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
IS - 1
M1 - 013405
ER -