NiMnGa nanostructures produced by electron beam lithography and Ar-ion etching

D. Auernhammer, M. Schmitt, M. Ohtsuka, M. Kohl

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The technologies of electron beam lithography, dry etching and systems integration are investigated to fabricate a series of Ni-Mn-Ga double-beam structures designed with decreasing critical dimensions of 10μm, 1 μm and 400 nm. Ni-Mn-Ga thin films of 1 μm thickness are deposited by magnetron sputtering and heat-treated in free-standing condition after selective removal of the substrate. Differential scanning calorimetry and electrical resistance measurements on the films show the characteristic features of martensitic transformation above room temperature. First optical beam deflection experiments demonstrate the magnetic and thermal actuation performance of the double-beam structures.

Original languageEnglish
Pages (from-to)249-254
Number of pages6
JournalEuropean Physical Journal: Special Topics
Issue number1
Publication statusPublished - 2008 May

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry


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