TY - JOUR
T1 - Nitridation of Si(100) surface with NH 3
AU - Ishidzuka, S.
AU - Igari, Y.
AU - Takaoka, T.
AU - Kusunoki, I.
N1 - Funding Information:
We would like to thank Mr. K. Shibata for taking the SEM microphotographs. This work was financially supported in part by grants-in-aid for science research from the Ministry of Education, Science, and Culture of Japan, and by CREST (Core Research for Evolutional Science and Technology) of Japan Science and Technology.
PY - 1998/6
Y1 - 1998/6
N2 - The nitridation of a Si(100) surface with a NH 3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 900°C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components.
AB - The nitridation of a Si(100) surface with a NH 3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 900°C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components.
KW - Ammonia (M1c12)
KW - Scanning electron microscopy (S2ej12)
KW - Silicon (M1a90)
KW - Silicon Nitride (M1b78)
KW - X-ray photoelectron spectroscopy (S2pe12)
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U2 - 10.1016/S0169-4332(98)00034-8
DO - 10.1016/S0169-4332(98)00034-8
M3 - Article
AN - SCOPUS:0032098608
SN - 0169-4332
VL - 130-132
SP - 107
EP - 111
JO - Applied Surface Science
JF - Applied Surface Science
ER -