The nitridation of a Si(100) surface with a NH 3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 900°C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components.
- Ammonia (M1c12)
- Scanning electron microscopy (S2ej12)
- Silicon (M1a90)
- Silicon Nitride (M1b78)
- X-ray photoelectron spectroscopy (S2pe12)