Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Tadashige Sato; Megumi Imai

doi:10.1063/1.1473693

Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Tadashige Sato, Megumi Imai

IMR - Institute for Materials Research (institute affiliation only)

Mitsubishi Chemical Holdings Corporation

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p ⁺/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×10¹⁷cm^-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

Original language	English
Pages (from-to)	2875-2877
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	16
DOIs	https://doi.org/10.1063/1.1473693
Publication status	Published - 2002 Apr 22

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abstract = "Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.",

author = "Tadashige Sato and Megumi Imai",

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N2 - Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

AB - Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

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Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

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