Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.