Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

Yongxun Liu; Tetsuro Hayashida; Takashi Matsukawa; Kazuhiko Endo; Meishoku Masahara; Shinich O'uchi; Kunihiro Sakamoto; Kenichi Ishii; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Atsushi Ogura; Eiichi Suzuki

doi:10.1143/JJAP.47.2433

Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A sputtered titanium nitride (TiN) metal gate has systematically been investigated, and the dependences of TiN work function (φ_TiN) and device performance on nitrogen gas flow ratio [R_N = N ₂/(N₂ + Ar)] in sputtering and rapid thermal annealing (RTA) temperature (T_R) are clarified. It is experimentally found that φ_TiN slightly decreases from 4.87 to 4.78 eV with increasing R_N from 17 to 83%, and it markedly decreases with increasing T _R. The analysis of the electrical characteristics of fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) shows that the optimal R_N range is 17-50%, and a higher R_N offers a lower V_th owing to the lower φ_TiN. The origin of φ_TiN decrease with increasing R_N and T_R is discussed. The obtained results indicate that φ_TiN can be controlled by sputtering and RTA conditions, and are very useful for setting the appropriate V_th for lightly doped channel devices such as a FinFET.

Original language	English
Pages (from-to)	2433-2437
Number of pages	5
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.2433
Publication status	Published - 2008 Apr 25
Externally published	Yes

Keywords

Flat band voltage
Gate-first FinFET
Rapid thermal annealing
Threshold voltage control
TiN metal gate
Work function

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.2433

Cite this

Liu, Y., Hayashida, T., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S., Sakamoto, K., Ishii, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Suzuki, E. (2008). Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics. Japanese journal of applied physics, 47(4 PART 2), 2433-2437. https://doi.org/10.1143/JJAP.47.2433

Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics. / Liu, Yongxun; Hayashida, Tetsuro; Matsukawa, Takashi et al.
In: Japanese journal of applied physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2433-2437.

Research output: Contribution to journal › Article › peer-review

Liu, Y, Hayashida, T, Matsukawa, T, Endo, K, Masahara, M, O'uchi, S, Sakamoto, K, Ishii, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, Ogura, A & Suzuki, E 2008, 'Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics', Japanese journal of applied physics, vol. 47, no. 4 PART 2, pp. 2433-2437. https://doi.org/10.1143/JJAP.47.2433

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abstract = "A sputtered titanium nitride (TiN) metal gate has systematically been investigated, and the dependences of TiN work function (φTiN) and device performance on nitrogen gas flow ratio [RN = N 2/(N2 + Ar)] in sputtering and rapid thermal annealing (RTA) temperature (TR) are clarified. It is experimentally found that φTiN slightly decreases from 4.87 to 4.78 eV with increasing RN from 17 to 83%, and it markedly decreases with increasing T R. The analysis of the electrical characteristics of fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) shows that the optimal RN range is 17-50%, and a higher RN offers a lower Vth owing to the lower φTiN. The origin of φTiN decrease with increasing RN and TR is discussed. The obtained results indicate that φTiN can be controlled by sputtering and RTA conditions, and are very useful for setting the appropriate Vth for lightly doped channel devices such as a FinFET.",

keywords = "Flat band voltage, Gate-first FinFET, Rapid thermal annealing, Threshold voltage control, TiN metal gate, Work function",

author = "Yongxun Liu and Tetsuro Hayashida and Takashi Matsukawa and Kazuhiko Endo and Meishoku Masahara and Shinich O'uchi and Kunihiro Sakamoto and Kenichi Ishii and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Atsushi Ogura and Eiichi Suzuki",

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T1 - Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

AU - Liu, Yongxun

AU - Hayashida, Tetsuro

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AU - Endo, Kazuhiko

AU - Masahara, Meishoku

AU - O'uchi, Shinich

AU - Sakamoto, Kunihiro

AU - Ishii, Kenichi

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Ogura, Atsushi

AU - Suzuki, Eiichi

PY - 2008/4/25

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N2 - A sputtered titanium nitride (TiN) metal gate has systematically been investigated, and the dependences of TiN work function (φTiN) and device performance on nitrogen gas flow ratio [RN = N 2/(N2 + Ar)] in sputtering and rapid thermal annealing (RTA) temperature (TR) are clarified. It is experimentally found that φTiN slightly decreases from 4.87 to 4.78 eV with increasing RN from 17 to 83%, and it markedly decreases with increasing T R. The analysis of the electrical characteristics of fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) shows that the optimal RN range is 17-50%, and a higher RN offers a lower Vth owing to the lower φTiN. The origin of φTiN decrease with increasing RN and TR is discussed. The obtained results indicate that φTiN can be controlled by sputtering and RTA conditions, and are very useful for setting the appropriate Vth for lightly doped channel devices such as a FinFET.

AB - A sputtered titanium nitride (TiN) metal gate has systematically been investigated, and the dependences of TiN work function (φTiN) and device performance on nitrogen gas flow ratio [RN = N 2/(N2 + Ar)] in sputtering and rapid thermal annealing (RTA) temperature (TR) are clarified. It is experimentally found that φTiN slightly decreases from 4.87 to 4.78 eV with increasing RN from 17 to 83%, and it markedly decreases with increasing T R. The analysis of the electrical characteristics of fabricated metal-oxide-semiconductor field-effect transistors (MOSFETs) shows that the optimal RN range is 17-50%, and a higher RN offers a lower Vth owing to the lower φTiN. The origin of φTiN decrease with increasing RN and TR is discussed. The obtained results indicate that φTiN can be controlled by sputtering and RTA conditions, and are very useful for setting the appropriate Vth for lightly doped channel devices such as a FinFET.

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Nitrogen gas flow ratio and rapid thermal annealing temperature dependences of sputtered titanium nitride gate work function and their effect on device characteristics

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Keywords

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