Abstract
The first reported NO gas sensor based on a surface photovoltage (SPV) semiconductor device system is fabricated with a metal/SiO2 (self-ordered hexagonal mesoporous)/Si3N4/SiO2/Si structure (MIS). A size controlled silicate mesoporous film is successfully synthesized by spin coating on a Si3N4/SiO2/Si silicon wafer using poly(ethylene oxide)-poly(propyle oxide)-poly(ethylene oxide) (Pluronic P123 = EO20PO70EO20) triblock copolymers as a template. The characteristics of the mesoporous films were investigated by X-ray diffraction (XRD) and transmission electron microscope (TEM). The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by repeated exposure to NO gas and air. The changes in the average value and phase of the AC photocurrent (Iph) have been observed after exposure of the films to 100 ppm NO gas. The response of the alternative photocurrent results from the physical adsorption and chemical interaction between detected NO gases and the self-ordered hexagonal mesoporous film.
Original language | English |
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Pages (from-to) | 7098-7102 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2001 Dec |
Externally published | Yes |
Keywords
- Gas sensor
- Mesoporous
- Mesostructure
- Ordered and aligned pore
- Pluronic P123
- Size control
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)