TY - GEN
T1 - Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements
AU - Muller, J.
AU - Korbitzer, B.
AU - Amyan, A.
AU - Pohlit, M.
AU - Ohno, Y.
AU - Ohno, H.
PY - 2015/10/2
Y1 - 2015/10/2
N2 - We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exponential kinetics reveals a distribution of activation energies for the 1/f α-type fluctuations. In addition to the 1/f-noise, two-level fluctuators with distinct energies are observed. We identify deep donor levels in AlGaAs (DX centers) as the predominant source of 1/f-noise and discuss the effect of the corresponding energy signature of these defect levels on the device performance in different temperature regimes, where we find an extremely low noise level at temperatures below ∼ 100 K and above ∼ 200 K.
AB - We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exponential kinetics reveals a distribution of activation energies for the 1/f α-type fluctuations. In addition to the 1/f-noise, two-level fluctuators with distinct energies are observed. We identify deep donor levels in AlGaAs (DX centers) as the predominant source of 1/f-noise and discuss the effect of the corresponding energy signature of these defect levels on the device performance in different temperature regimes, where we find an extremely low noise level at temperatures below ∼ 100 K and above ∼ 200 K.
KW - 1/f noise
KW - 2DEG in GaAs/AlGaAs heterostructures
KW - DX centers
KW - micro-Hall magnetometry
UR - http://www.scopus.com/inward/record.url?scp=84961782239&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961782239&partnerID=8YFLogxK
U2 - 10.1109/ICNF.2015.7288544
DO - 10.1109/ICNF.2015.7288544
M3 - Conference contribution
AN - SCOPUS:84961782239
T3 - 2015 International Conference on Noise and Fluctuations, ICNF 2015
BT - 2015 International Conference on Noise and Fluctuations, ICNF 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Conference on Noise and Fluctuations, ICNF 2015
Y2 - 2 June 2015 through 6 June 2015
ER -