@inproceedings{a752d226b772412bbab11796ec47314d,
title = "Non-conductive film underfill for 3D integration of 20 μm-thick LSI wafers with fine Cu-TSVs",
abstract = "The beneficial role played by non-conductive film (NCF) under-fill (UF) compared with the conventional capillary under fill (CUF) is meticulously investigated for the reliability issues in high-density 3D-integration at die/wafer-level. The NCF with co-efficient of thermal expansion (CTE) value of 35 ppm/°C tremendously reduces the local deformation of 20 pm-thick three-dimensionally (3D)-stacked LSI die/wafer. This reduces the local mechanical stress in thinned 3D-LSI by nearly 5 times as against the CUF with the CTE value of 60-70 ppm/C. Both μ-RS and μ-XRD data showed only ∼250 MPa of tensile stress on the back surface of 20 pm-thick stacked die/wafer with NCFUF, whereas it was more than five-times larger (∼1400 MPa) for CUF. μ-XRD data illustrates that the cause for residual stress in the bump-space region and above the μ-bump are respectively due to the lattice tilt and change in lattice space.",
keywords = "NCF, Thermo-Mechanical Stress, μ-XRD",
author = "M. Murugesan and Bea, {J. C.} and M. Koyanagi and Y. Ito and T. Fukushima and T. Tanaka",
year = "2016",
month = jun,
day = "13",
doi = "10.1109/ASMC.2016.7491097",
language = "English",
series = "2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "466--471",
booktitle = "2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016",
note = "27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016 ; Conference date: 16-05-2016 Through 19-05-2016",
}