Abstract
Non-destructive determination of Cr concentration distribution in Cr doped semi-insulating GaAs substrates is described. Substrate conductance change खG caused by light illumination, which is known to be correlated with the Cr concentration in the substrate, is determined by the use of a microwave technique. The Cr concentration distribution in semi-insulating GaAs substrates determined by the present method agrees with the tendency expected from the crystal growth condition. The present method would be very useful for ion implantation used in GaAs IC fabrication.
| Original language | English |
|---|---|
| Pages (from-to) | L786-L788 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 21 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1982 Dec |