TY - JOUR
T1 - Non-epitaxial and graphoepitaxial growth of tin thin films on an UHV-cleaved sodium chloride substrate
AU - Osaka, T.
AU - Kasukabe, Y.
AU - Nakamura, H.
N1 - Funding Information:
The authors are indebted to Messrs. K. Fuwa and M. Yata for critical reading of this manuscript and for helpful discussions throughout this work. This work was partially supported by a Grant-in-Aid from the Ministry of Education.
PY - 1984/11/1
Y1 - 1984/11/1
N2 - Thin films of tin were prepared by vacuum deposition on an UHV-cleaved sodium chloride substrate at room temperature in order to study the growth features. The small particles of tin, which were examined by high resolution TEM and electron diffraction, grew graphoepitaxially on steps, whereas those on flat areas were located and oriented almost randomly. The results, therefore, indicate that several works concerning teh epitaxial growth of tin that has been reported so far have been performed on surfaces with a high density of steps parallel to the 〈100〉 direction of the substrate.
AB - Thin films of tin were prepared by vacuum deposition on an UHV-cleaved sodium chloride substrate at room temperature in order to study the growth features. The small particles of tin, which were examined by high resolution TEM and electron diffraction, grew graphoepitaxially on steps, whereas those on flat areas were located and oriented almost randomly. The results, therefore, indicate that several works concerning teh epitaxial growth of tin that has been reported so far have been performed on surfaces with a high density of steps parallel to the 〈100〉 direction of the substrate.
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U2 - 10.1016/0022-0248(84)90022-8
DO - 10.1016/0022-0248(84)90022-8
M3 - Article
AN - SCOPUS:2342626162
SN - 0022-0248
VL - 69
SP - 149
EP - 154
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -