NONDESTRUCTIVE MEASUREMENTS OF Si-SiO2 INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA.

Toshihisa Suzuki; Masaaki Muto; Motohiro Hara; Takeo Hattori; Kikuo Yamabe; Hiroshi Yamauchi

doi:10.7567/ssdm.1984.b-5-3

NONDESTRUCTIVE MEASUREMENTS OF Si-SiO₂ INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA.

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Takeo Hattori, Kikuo Yamabe, Hiroshi Yamauchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The increase in the probing depth to nearly 20 nm is realized for silicon oxide by using X-ray excited Si KLL Auger electron spectra. The consistent analytical results with those obtained by using Mg K alpha radiation excited Si 2p photoelectron spectra were obtained. These consistent analytical results verify the assumption that in the thickness range studied, the distribution of the intermediate oxidation states in the oxide film is almost independent on the oxide film thickness. This assumption is also confirmed from the depth profiling studies by using chemical etching.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Business Cent for Academic Soc Japan
Pages	297-300
Number of pages	4
ISBN (Print)	4930813077, 9784930813077
DOIs	https://doi.org/10.7567/ssdm.1984.b-5-3
Publication status	Published - 1984

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1984.b-5-3

Cite this

Suzuki, T., Muto, M., Hara, M., Hattori, T., Yamabe, K., & Yamauchi, H. (1984). NONDESTRUCTIVE MEASUREMENTS OF Si-SiO₂ INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA. In Conference on Solid State Devices and Materials (pp. 297-300). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan. https://doi.org/10.7567/ssdm.1984.b-5-3

NONDESTRUCTIVE MEASUREMENTS OF Si-SiO₂ INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA. / Suzuki, Toshihisa; Muto, Masaaki; Hara, Motohiro et al.
Conference on Solid State Devices and Materials. Business Cent for Academic Soc Japan, 1984. p. 297-300 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suzuki, T, Muto, M, Hara, M, Hattori, T, Yamabe, K & Yamauchi, H 1984, NONDESTRUCTIVE MEASUREMENTS OF Si-SiO₂ INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA. in Conference on Solid State Devices and Materials. Conference on Solid State Devices and Materials, Business Cent for Academic Soc Japan, pp. 297-300. https://doi.org/10.7567/ssdm.1984.b-5-3

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abstract = "The increase in the probing depth to nearly 20 nm is realized for silicon oxide by using X-ray excited Si KLL Auger electron spectra. The consistent analytical results with those obtained by using Mg K alpha radiation excited Si 2p photoelectron spectra were obtained. These consistent analytical results verify the assumption that in the thickness range studied, the distribution of the intermediate oxidation states in the oxide film is almost independent on the oxide film thickness. This assumption is also confirmed from the depth profiling studies by using chemical etching.",

author = "Toshihisa Suzuki and Masaaki Muto and Motohiro Hara and Takeo Hattori and Kikuo Yamabe and Hiroshi Yamauchi",

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AB - The increase in the probing depth to nearly 20 nm is realized for silicon oxide by using X-ray excited Si KLL Auger electron spectra. The consistent analytical results with those obtained by using Mg K alpha radiation excited Si 2p photoelectron spectra were obtained. These consistent analytical results verify the assumption that in the thickness range studied, the distribution of the intermediate oxidation states in the oxide film is almost independent on the oxide film thickness. This assumption is also confirmed from the depth profiling studies by using chemical etching.

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