Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source

A. Hamano; Y. Takatsu; S. Ohno; H. Minamide; H. Ito; Y. Usuki

doi:10.1109/CLEOE.2011.5942519

Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source

A. Hamano, Y. Takatsu, S. Ohno, H. Minamide, H. Ito, Y. Usuki

SCI - Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz [1,2].

Original language	English
Title of host publication	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs	https://doi.org/10.1109/CLEOE.2011.5942519
Publication status	Published - 2011 Sept 6
Event	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany Duration: 2011 May 22 → 2011 May 26

Publication series

Name	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Other

Other	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Country/Territory	Germany
City	Munich
Period	11/5/22 → 11/5/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/CLEOE.2011.5942519

Cite this

Hamano, A., Takatsu, Y., Ohno, S., Minamide, H., Ito, H., & Usuki, Y. (2011). Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 [5942519] (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). https://doi.org/10.1109/CLEOE.2011.5942519

Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source. / Hamano, A.; Takatsu, Y.; Ohno, S. et al.
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942519 (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hamano, A, Takatsu, Y, Ohno, S, Minamide, H, Ito, H & Usuki, Y 2011, Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011., 5942519, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany, 11/5/22. https://doi.org/10.1109/CLEOE.2011.5942519

Hamano A, Takatsu Y, Ohno S, Minamide H, Ito H, Usuki Y. Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942519. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). doi: 10.1109/CLEOE.2011.5942519

Hamano, A. ; Takatsu, Y. ; Ohno, S. et al. / Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

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abstract = "The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz [1,2].",

author = "A. Hamano and Y. Takatsu and S. Ohno and H. Minamide and H. Ito and Y. Usuki",

year = "2011",

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AU - Ito, H.

AU - Usuki, Y.

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AB - The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz [1,2].

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Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source

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