TY - JOUR
T1 - Nonequilibrium population in fractional edge states
AU - Machida, T.
AU - Ishizuka, S.
AU - Komiyama, S.
AU - Muraki, K.
AU - Hirayama, Y.
PY - 2001/4
Y1 - 2001/4
N2 - We study transport through two scattering barriers, which are formed by Schottky cross gates on Al0.3Ga0.7As/GaAs Hall bars. The gates sandwich the intermediate region adjusted to the ν = 1 integer quantum-Hall (IQH) state. Nonequilibrium population is noted to be created when ν = 2/3, 3/5, and 1/3 are realized in the regions underneath the gates, suggesting the formation of ν = 2/3, 3/5, and 1/3 fractional quantum-Hall (FQH) edge states in the bulk ν = 1 IQH-state. The unequally occupied FQH-edge states carry the current over a 5 μm distance without equilibration. We discuss the width of incompressible strips in FQH-states from the equilibration length in FQH-edge states.
AB - We study transport through two scattering barriers, which are formed by Schottky cross gates on Al0.3Ga0.7As/GaAs Hall bars. The gates sandwich the intermediate region adjusted to the ν = 1 integer quantum-Hall (IQH) state. Nonequilibrium population is noted to be created when ν = 2/3, 3/5, and 1/3 are realized in the regions underneath the gates, suggesting the formation of ν = 2/3, 3/5, and 1/3 fractional quantum-Hall (FQH) edge states in the bulk ν = 1 IQH-state. The unequally occupied FQH-edge states carry the current over a 5 μm distance without equilibration. We discuss the width of incompressible strips in FQH-states from the equilibration length in FQH-edge states.
KW - Edge states
KW - Fractional quantum Hall effect
KW - Nonequilibrium population
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U2 - 10.1016/S0921-4526(01)00290-3
DO - 10.1016/S0921-4526(01)00290-3
M3 - Article
AN - SCOPUS:0035303296
SN - 0921-4526
VL - 298
SP - 150
EP - 154
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1-4
ER -