Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs

A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, Y. Sugawara

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160 Citations (Scopus)


We have studied magnetic and transport properties of a series of Gai1-xMnxAs/GaAs samples with different Mn concentrations (x = 0.015-0.071), For Mn content higher than about 0.02, carrier(hole)-induced ferromagnetism is observed. Samples with x = 0.035 and 0.043 behave as ferromagnetic dirty metals. With further increase of Mn content above x ∼ 0.05, the zero-field resistivity turns a semiconducting temperature dependence. Very large negative magnetoresistance is observed in nonmetallic samples near the metal-nonmetal transitions both in the low and the high Mn content regimes.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalSolid State Communications
Issue number4
Publication statusPublished - 1997 Jul


  • A. semiconductors
  • C. impurities in semiconductors
  • D. electronic transport
  • Magnetically ordered system


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