Novel amorphization process in silicon induced by electron irradiation

J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki, S. Takeda

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation.

Original languageEnglish
Pages (from-to)793-797
Number of pages5
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - 2002 Apr


Dive into the research topics of 'Novel amorphization process in silicon induced by electron irradiation'. Together they form a unique fingerprint.

Cite this