TY - JOUR
T1 - Novel amorphization process in silicon induced by electron irradiation
AU - Yamasaki, J.
AU - Ohno, Y.
AU - Kohno, H.
AU - Ozaki, N.
AU - Takeda, S.
N1 - Funding Information:
This work is partly supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research (A)(2) No. 10305006, 1998–2000. Electron irradiation was performed at ultra-high voltage electron microscope center of Osaka University.
PY - 2002/4
Y1 - 2002/4
N2 - We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation.
AB - We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation.
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U2 - 10.1016/S0022-3093(01)00984-X
DO - 10.1016/S0022-3093(01)00984-X
M3 - Article
AN - SCOPUS:17444450725
SN - 0022-3093
VL - 299-302
SP - 793
EP - 797
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -