Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs

Y. H. Song, K. Y. Kim, J. C. Bae, K. Kato, E. Arakawa, K. S. Kim, K. T. Park, H. Kurino, M. Koyanagi

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.

Original languageEnglish
Pages (from-to)505-508
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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