Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs

Y. H. Song; K. Y. Kim; J. C. Bae; K. Kato; E. Arakawa; K. S. Kim; K. T. Park; H. Kurino; M. Koyanagi

Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs

Y. H. Song, K. Y. Kim, J. C. Bae, K. Kato, E. Arakawa, K. S. Kim, K. T. Park, H. Kurino, M. Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.

Original language	English
Pages (from-to)	505-508
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999 Dec 1
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{02b6d336936049b8844892c2ccb6c870,

title = "Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs",

abstract = "This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.",

author = "Song, {Y. H.} and Kim, {K. Y.} and Bae, {J. C.} and K. Kato and E. Arakawa and Kim, {K. S.} and Park, {K. T.} and H. Kurino and M. Koyanagi",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "505--508",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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TY - JOUR

T1 - Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs

AU - Song, Y. H.

AU - Kim, K. Y.

AU - Bae, J. C.

AU - Kato, K.

AU - Arakawa, E.

AU - Kim, K. S.

AU - Park, K. T.

AU - Kurino, H.

AU - Koyanagi, M.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.

AB - This paper presents a novel technology to form an ultra-shallow source and drain extension (SDE) junctions for the future MOSFETs. In this technology, a dopant in an adsorbed layer on the Si surface diffuses into the substrate by the rapid thermal annealing (RTA). Shallow junction formation using arsenic (As) diffusion and boron (B) diffusion was realized by using this technology. This technology provided extremely shallow SDE junction depths with low sheet resistance for N and P-type doping.

UR - http://www.scopus.com/inward/record.url?scp=0033332637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033332637&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033332637

SN - 0163-1918

SP - 505

EP - 508

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Novel atomic layer doping technology for ultra-shallow junction in sub-0.1μm MOSFETs

Abstract

ASJC Scopus subject areas

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