Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

Kiyoshi Araki; Kiyoshi Morimoto; Kiyoyuki Morita; Masaaki Niwa; Yoshihiko Hirai

doi:10.1143/jjap.35.6679

Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

Kiyoshi Araki, Kiyoshi Morimoto, Kiyoyuki Morita, Masaaki Niwa, Yoshihiko Hirai

Research output: Contribution to journal › Article › peer-review

Abstract

We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.

Original language	English
Pages (from-to)	6679-6682
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	12 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.6679
Publication status	Published - 1996 Dec
Externally published	Yes

Keywords

Alignment
Anisotropic wet chemical etching
Atomic force microscope
Field-enhanced oxidation
Nanofabrication
Quantum functional device
Si nanostructure

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.35.6679

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Araki, K., Morimoto, K., Morita, K., Niwa, M., & Hirai, Y. (1996). Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(12 SUPPL. B), 6679-6682. https://doi.org/10.1143/jjap.35.6679

Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching. / Araki, Kiyoshi; Morimoto, Kiyoshi; Morita, Kiyoyuki et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 12 SUPPL. B, 12.1996, p. 6679-6682.

Research output: Contribution to journal › Article › peer-review

Araki, K, Morimoto, K, Morita, K, Niwa, M & Hirai, Y 1996, 'Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 35, no. 12 SUPPL. B, pp. 6679-6682. https://doi.org/10.1143/jjap.35.6679

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abstract = "We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.",

keywords = "Alignment, Anisotropic wet chemical etching, Atomic force microscope, Field-enhanced oxidation, Nanofabrication, Quantum functional device, Si nanostructure",

author = "Kiyoshi Araki and Kiyoshi Morimoto and Kiyoyuki Morita and Masaaki Niwa and Yoshihiko Hirai",

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AU - Niwa, Masaaki

AU - Hirai, Yoshihiko

PY - 1996/12

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Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

Abstract

Keywords

ASJC Scopus subject areas

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