Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

Koh Yoshikawa; Takeharu Koga; Takeshi Fujii; Tsutomu Katoh; Yoshikazu Takahashi; Yasukazu Seki

Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

Koh Yoshikawa, Takeharu Koga, Takeshi Fujii, Tsutomu Katoh, Yoshikazu Takahashi, Yasukazu Seki

Research output: Contribution to conference › Paper › peer-review

Abstract

A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes ( peak collector voltage=2500V, Tj=125°C) and the short circuit capability of over 50μsec (V_CC=1600V, Tj=125°C) are successfully attained by a newly developed Power Pack IGBT. In this paper, the simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.

Original language	English
Pages	177-180
Number of pages	4
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99 - Toronto, Ont, Can Duration: 1999 May 26 → 1999 May 28

Other

Other	Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99
City	Toronto, Ont, Can
Period	99/5/26 → 99/5/28

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT. / Yoshikawa, Koh; Koga, Takeharu; Fujii, Takeshi et al.
1999. 177-180 Paper presented at Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99, Toronto, Ont, Can.

Research output: Contribution to conference › Paper › peer-review

Yoshikawa, K, Koga, T, Fujii, T, Katoh, T, Takahashi, Y & Seki, Y 1999, 'Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT', Paper presented at Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99, Toronto, Ont, Can, 99/5/26 - 99/5/28 pp. 177-180.

@conference{5531f24aa0f54ebabbbd3cfa6b02f26c,

title = "Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT",

abstract = "A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes ( peak collector voltage=2500V, Tj=125°C) and the short circuit capability of over 50μsec (VCC=1600V, Tj=125°C) are successfully attained by a newly developed Power Pack IGBT. In this paper, the simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.",

author = "Koh Yoshikawa and Takeharu Koga and Takeshi Fujii and Tsutomu Katoh and Yoshikazu Takahashi and Yasukazu Seki",

year = "1999",

language = "English",

pages = "177--180",

note = "Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99 ; Conference date: 26-05-1999 Through 28-05-1999",

}

TY - CONF

T1 - Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

AU - Yoshikawa, Koh

AU - Koga, Takeharu

AU - Fujii, Takeshi

AU - Katoh, Tsutomu

AU - Takahashi, Yoshikazu

AU - Seki, Yasukazu

PY - 1999

Y1 - 1999

N2 - A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes ( peak collector voltage=2500V, Tj=125°C) and the short circuit capability of over 50μsec (VCC=1600V, Tj=125°C) are successfully attained by a newly developed Power Pack IGBT. In this paper, the simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.

AB - A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes ( peak collector voltage=2500V, Tj=125°C) and the short circuit capability of over 50μsec (VCC=1600V, Tj=125°C) are successfully attained by a newly developed Power Pack IGBT. In this paper, the simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.

UR - http://www.scopus.com/inward/record.url?scp=0032598927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032598927&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032598927

SP - 177

EP - 180

T2 - Proceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99

Y2 - 26 May 1999 through 28 May 1999

ER -

Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this