Novel method for site-controlled surface nanodot fabrication by ion beam synthesis

Ryan Buckmaster; Takashi Hanada; Yoshiyuki Kawazoe; Meoung Whan Cho; Takafumi Yao; Nobuaki Urushihara; Akira Yamamoto

doi:10.1021/nl048044j

Novel method for site-controlled surface nanodot fabrication by ion beam synthesis

Ryan Buckmaster, Takashi Hanada, Yoshiyuki Kawazoe, Meoung Whan Cho, Takafumi Yao, Nobuaki Urushihara, Akira Yamamoto

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

By using a Ga FIB system to spatially control the implantation of Ga into SiO₂ followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.

Original language	English
Pages (from-to)	771-776
Number of pages	6
Journal	Nano Letters
Volume	5
Issue number	4
DOIs	https://doi.org/10.1021/nl048044j
Publication status	Published - 2005 Apr 1

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl048044j

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title = "Novel method for site-controlled surface nanodot fabrication by ion beam synthesis",

abstract = "By using a Ga FIB system to spatially control the implantation of Ga into SiO2 followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.",

author = "Ryan Buckmaster and Takashi Hanada and Yoshiyuki Kawazoe and Cho, {Meoung Whan} and Takafumi Yao and Nobuaki Urushihara and Akira Yamamoto",

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AU - Buckmaster, Ryan

AU - Hanada, Takashi

AU - Kawazoe, Yoshiyuki

AU - Cho, Meoung Whan

AU - Yao, Takafumi

AU - Urushihara, Nobuaki

AU - Yamamoto, Akira

PY - 2005/4/1

Y1 - 2005/4/1

N2 - By using a Ga FIB system to spatially control the implantation of Ga into SiO2 followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.

AB - By using a Ga FIB system to spatially control the implantation of Ga into SiO2 followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.

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JF - Nano Letters

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Novel method for site-controlled surface nanodot fabrication by ion beam synthesis

Abstract

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