Novel method for site-controlled surface nanodot fabrication by ion beam synthesis

Ryan Buckmaster, Takashi Hanada, Yoshiyuki Kawazoe, Meoung Whan Cho, Takafumi Yao, Nobuaki Urushihara, Akira Yamamoto

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


By using a Ga FIB system to spatially control the implantation of Ga into SiO2 followed by vacuum annealing, we have fabricated self-assembled surface Ga nanodots with a high degree of control of nucleation location. The morphology of the Ga nanodots is closely related to Ga dose, showing a critical dose needed for nucleation that results in Ga nanodot formation just below the surface, while at higher doses Ga nanodots form on the surface as metallic Ga droplets. Possible applications include defining nucleation sites for subsequent growth, use as Ga source for GaN or GaAs quantum dots, or as catalyst for nanowire growth.

Original languageEnglish
Pages (from-to)771-776
Number of pages6
JournalNano Letters
Issue number4
Publication statusPublished - 2005 Apr 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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