A novel NAND DRAM with SGT-type gain cell is proposed. This SGT-type gain cell structure is composed of an SGT and SGT-type capacitor slacked vertically on a planar read transistor. Its cell size can be reduced to 4F2 since it can be arranged to have the cross-point configuration. Therefore, high-density DRAM is achieved. Since it operates as a gain cell, it is possible to obtain sufficient signal charge regardless of the stored amount. Therefore, the proposed DRAM operates at low supply voltages, where it is difficult to obtain sufficient read-out voltage in conventional DRAM. It is shown that the novel NAND DRAM with SGT-type gain cell achieves high-density and low-voltage operation.
|Number of pages||8|
|Journal||Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)|
|Publication status||Published - 2004 Jul|
- Low-voltage operation
- NAND DRAM
- SGT-type gain cell
- Surrounding gate transistor (SGT)