@inproceedings{a547170ce9564a33967a27fc91f2913c,
title = "Novel oxygen showering process (OSP) for extreme damage suppression of sub-20nm high density p-MTJ array without IBE treatment",
abstract = "A novel damage recovery scheme using the oxygen showering post-treatment (OSP) is proposed to recover patterning damages and to improve electric and magnetic properties of p-MTJs, and its array yield. By applying our OSP to 25nm p-MTJs cell array, the MR was increased from 99% to 116% and the Isw was decreased from 41.1uA to 28.7uA. Moreover, electric short fails of MTJs array due to metallic by-products reduced dramatically by the selective oxidation of the damaged layer and its isolation from damage-less area. The OSP process makes the switching efficiency of 25nm patterned MTJs to be improved more than 30% compared with IBE treatment process. The mechanism of this enhancement is that spin directions of damaged area is changed from perpendicular to in-plane and, by this change, the energy barrier of damaged area is reduced. By the OSP treatment, we could develop the robust patterning process for sub-20nm STT-MRAM.",
keywords = "Damage recovery, MRAM, MTJs, selective oxidation, short yield, switching efficiency",
author = "Jeong, {J. H.} and T. Endoh",
note = "Publisher Copyright: {\textcopyright} 2015 JSAP.; Symposium on VLSI Technology, VLSI Technology 2015 ; Conference date: 16-06-2015 Through 18-06-2015",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/VLSIT.2015.7223660",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T158--T159",
booktitle = "2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers",
address = "United States",
}