TY - GEN
T1 - Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm
AU - Nishioka, K.
AU - Honjo, H.
AU - Ikeda, S.
AU - Watanabe, T.
AU - Miura, S.
AU - Inoue, H.
AU - Tanigawa, T.
AU - Noguchi, Y.
AU - Yasuhira, M.
AU - Sato, H.
AU - Endoh, T.
N1 - Funding Information:
This work was supported by CIES's Industrial Affiliation on STT MRAM program, JST-ACCEL, and JST-OPERA.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/6
Y1 - 2019/6
N2 - We have proposed novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency Δ/IC0 by a factor of 1.5-2 compared with conventional double-interface MTJ technology. We successfully fabricated the quad-interface MTJ using 300mm process based on novel low damage integration process including PVD, RIE and so on [1]. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ/IC0. Moreover, we have achieved about two times larger TMR ratio/RA by the stack development specific for the quad-interface MTJ technology. The developed quad-interface MTJ technology regarded as post-double-interface MTJ technology will become an essential technology for the scaling of the STT-MRAM beyond 20nm.
AB - We have proposed novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency Δ/IC0 by a factor of 1.5-2 compared with conventional double-interface MTJ technology. We successfully fabricated the quad-interface MTJ using 300mm process based on novel low damage integration process including PVD, RIE and so on [1]. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ/IC0. Moreover, we have achieved about two times larger TMR ratio/RA by the stack development specific for the quad-interface MTJ technology. The developed quad-interface MTJ technology regarded as post-double-interface MTJ technology will become an essential technology for the scaling of the STT-MRAM beyond 20nm.
KW - Quad interface
KW - STT-MRAM
KW - interfacial anisotropy type MTJ
KW - switching efficiency
KW - thermal stability factor
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U2 - 10.23919/VLSIT.2019.8776499
DO - 10.23919/VLSIT.2019.8776499
M3 - Conference contribution
AN - SCOPUS:85070310220
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T120-T121
BT - 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th Symposium on VLSI Technology, VLSI Technology 2019
Y2 - 9 June 2019 through 14 June 2019
ER -