TY - JOUR
T1 - Novel spintronic materials based on ferromagnetic semiconductor chalcopyrites
AU - Medvedkin, G. A.
AU - Goloshchapov, S. I.
AU - Voevodin, V. G.
AU - Sato, K.
AU - Ishibashi, T.
AU - Mitani, S.
AU - Takanashi, K.
AU - Fujimori, A.
AU - Ishida, Y.
AU - Okabayashi, J.
AU - Sarma, D. D.
AU - Akai, H.
AU - Kamatani, T.
N1 - Funding Information:
The authors thank Professor P. G. Baranov for fruitful collaboration and discussion of the EPR data. This work was supported by St. Petersburg Committee of Science and Higher Education (Nos. 8B145, 8B246) and was carried out in frames of the 21st Century COE program on “Future Nano-Material” and joint research program of the Ioffe PTI, Siberian PTI and TUAT.
PY - 2004/2
Y1 - 2004/2
N2 - Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-element Mn have been recently prepared. The materials grown in both forms - single crystal layers and polycrystalline bulks -exhibit well defined ferromagnetic hysteresis with a saturation behavior in the magnetization curve up to above room temperature. Curie temperatures are of TC = 310 K to 320 K for (Cd1-xMnx)GeP 2 and (Zn1-xMnx)GeP2 compounds. The chemical states in the bulk of ZnGeP2:Mn and interface of Mn-doped ferromagnetic layer on ZnGeP2 (001) crystal, have been clarified by electron paramagnetic resonance and in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn-compound. In and below the subsurface region, dilute Mn2+ species as precursors of the DMS phase exist. Mn2+ ions are paramagnetic active on Zn2+ sites in the bulk and show five EPR sets of equidistant peaks. Theoretical band-gap calculation suggests a predominant antiferromagnetic order in stoichiometric (Cd, Mn)GeP2 but the systems with vacancies as (Cd, VC, Mn)GeP2 or (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable. These materials are of great promise for room-temperature spintronics applications.
AB - Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-element Mn have been recently prepared. The materials grown in both forms - single crystal layers and polycrystalline bulks -exhibit well defined ferromagnetic hysteresis with a saturation behavior in the magnetization curve up to above room temperature. Curie temperatures are of TC = 310 K to 320 K for (Cd1-xMnx)GeP 2 and (Zn1-xMnx)GeP2 compounds. The chemical states in the bulk of ZnGeP2:Mn and interface of Mn-doped ferromagnetic layer on ZnGeP2 (001) crystal, have been clarified by electron paramagnetic resonance and in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn-compound. In and below the subsurface region, dilute Mn2+ species as precursors of the DMS phase exist. Mn2+ ions are paramagnetic active on Zn2+ sites in the bulk and show five EPR sets of equidistant peaks. Theoretical band-gap calculation suggests a predominant antiferromagnetic order in stoichiometric (Cd, Mn)GeP2 but the systems with vacancies as (Cd, VC, Mn)GeP2 or (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable. These materials are of great promise for room-temperature spintronics applications.
KW - Diamond-like semiconductor
KW - Ferromagnet
KW - Room-temperature spintronics
UR - http://www.scopus.com/inward/record.url?scp=6444233660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=6444233660&partnerID=8YFLogxK
U2 - 10.1142/S0219581X04001791
DO - 10.1142/S0219581X04001791
M3 - Article
AN - SCOPUS:6444233660
SN - 0219-581X
VL - 3
SP - 39
EP - 50
JO - International Journal of Nanoscience
JF - International Journal of Nanoscience
IS - 1-2
ER -