Abstract
A new MOS technology with the following advantages has been investigated: TiSi//2 is formed by self-alignment to source and drain regions via silicidation; and TiN is formed by self-alignment to contact regions via direct nitridation. TiSi//2 was prepared by two-step annealing to only form silicide on the diffused layers. TiN was formed by direct nitridation of TiSi//2 in N//2 at a temperature higher than 900 degree C. The TiN formed using this method was found to be an effective diffusion barrier between Al and Si for annealing at up to 500 degree C for 1 h. PSG-cap annealing provided excellent p-n junction characteristics with a silicide layer of 4 OMEGA / D'ALEMB even after annealing at 950 degree C for 30 min. Characteristics of devices fabricated by this new technology are demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 208-211 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1985 Dec 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry