Novel THz Detection Mechanism in Gate-Readout Epitaxial Graphene FET

Hiroyoshi Kudo, Koichi Tamura, Hironobu Seki, Shinnosuke Uchigasaki, Chao Tang, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Akira Satou, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We propose and experimentally demonstrate a novel terahertz (THz) detection mechanism in the gate-readout epitaxial graphene-channel field effect transistor (EG-FET) employing the rectenna structure in the gate stack circuitry, called EG-RecFET. Through the experimentally obtained bias-voltage dependences of the photoresponse, we reveal that the in-plane plasmonic rectification is boosted by the gate-to-channel vertical nonlinear electrostatic induction, called the 3D rectification. Its supreme fast response performance is also demonstrated.

Original languageEnglish
Title of host publication2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024
PublisherIEEE Computer Society
ISBN (Electronic)9798350370324
DOIs
Publication statusPublished - 2024
Event49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024 - Perth, Australia
Duration: 2024 Sept 12024 Sept 6

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024
Country/TerritoryAustralia
CityPerth
Period24/9/124/9/6

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