@inproceedings{62962b2909714a98a5570884d91f6c74,
title = "Novel ultrasonic tool for vacancy observation in crystalline silicon",
abstract = "Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.",
author = "Terutaka Goto and Hiroshi Yamada-Kaneta and Masatoshi Hikin and Koji Sato and Yuichi Nemoto and Shintaro Nakamura",
year = "2007",
doi = "10.1149/1.2778661",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "187--194",
booktitle = "ECS Transactions - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7",
edition = "3",
note = "Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}