Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Y. Morita; T. Maeda; H. Ota; W. Mizubayashi; S. O'Uchi; M. Masahara; T. Matsukawa; K. Endo

doi:10.1109/IEDM.2015.7409703

Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Y. Morita, T. Maeda, H. Ota, W. Mizubayashi, S. O'Uchi, M. Masahara, T. Matsukawa, K. Endo

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O₂ molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.3.1-15.3.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409703
Publication status	Published - 2015 Feb 16
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 2015 Dec 7 → 2015 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	15/12/7 → 15/12/9

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10.1109/IEDM.2015.7409703

Cite this

Morita, Y., Maeda, T., Ota, H., Mizubayashi, W., O'Uchi, S., Masahara, M., Matsukawa, T., & Endo, K. (2015). Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 15.3.1-15.3.4). Article 7409703 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409703

Morita, Y. ; Maeda, T. ; Ota, H. et al. / Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 15.3.1-15.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels",

abstract = "We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.",

author = "Y. Morita and T. Maeda and H. Ota and W. Mizubayashi and S. O'Uchi and M. Masahara and T. Matsukawa and K. Endo",

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Morita, Y, Maeda, T, Ota, H, Mizubayashi, W, O'Uchi, S, Masahara, M, Matsukawa, T & Endo, K 2015, Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409703, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 15.3.1-15.3.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 15/12/7. https://doi.org/10.1109/IEDM.2015.7409703

Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. / Morita, Y.; Maeda, T.; Ota, H. et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 15.3.1-15.3.4 7409703 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Morita, Y.

AU - Maeda, T.

AU - Ota, H.

AU - Mizubayashi, W.

AU - O'Uchi, S.

AU - Masahara, M.

AU - Matsukawa, T.

AU - Endo, K.

PY - 2015/2/16

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N2 - We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.

AB - We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.

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Morita Y, Maeda T, Ota H, Mizubayashi W, O'Uchi S, Masahara M et al. Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 15.3.1-15.3.4. 7409703. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409703

Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

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