Nucleation and growth processes of silicon nanowires

Seiji Takeda; Nobuhiko Ozaki; Kohei Ueda; Hideo Kohno; Jun Kikkawa; Yutaka Ohno

Nucleation and growth processes of silicon nanowires

Seiji Takeda, Nobuhiko Ozaki, Kohei Ueda, Hideo Kohno, Jun Kikkawa, Yutaka Ohno

IMR - Institute for Materials Research (institute affiliation only)

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.

Original language	English
Article number	F9.1
Pages (from-to)	257-267
Number of pages	11
Journal	Materials Research Society Symposium Proceedings
Volume	832
Publication status	Published - 2005
Event	2004 MRS Fall Meeting - Boston, MA, United States Duration: 2004 Nov 29 → 2004 Dec 1

Cite this

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title = "Nucleation and growth processes of silicon nanowires",

abstract = "We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.",

author = "Seiji Takeda and Nobuhiko Ozaki and Kohei Ueda and Hideo Kohno and Jun Kikkawa and Yutaka Ohno",

year = "2005",

language = "English",

volume = "832",

pages = "257--267",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 01-12-2004",

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TY - JOUR

T1 - Nucleation and growth processes of silicon nanowires

AU - Takeda, Seiji

AU - Ozaki, Nobuhiko

AU - Ueda, Kohei

AU - Kohno, Hideo

AU - Kikkawa, Jun

AU - Ohno, Yutaka

PY - 2005

Y1 - 2005

N2 - We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.

AB - We have studied the nucleation and growth processes of silicon nanowires (SiNWs) by means of transmission electron microscopy and scanning tunneling microscopy. SiNWs are grown on hydrogen-terminated Si surface via the VLS (Vapor-Liquid-Solid) mechanism using silane (SiH4) as source gas. We have classified the growth process of SiNWs into three stages: the formation of nanocatalysts on a substrate, the nucleation of SiNWs in nanocatalysts, followed by the growth of SiNWs. We have shown that the structures of SiNWs are varied in several ways in each stage, and accordingly the structural properties of grown SiNWs can be modified to great extents. At the present moment, the phenomena at the each stage are not fully controlled, and this prevents us utilizing silicon nanowires more effectively.

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M3 - Conference article

AN - SCOPUS:23844542038

SN - 0272-9172

VL - 832

SP - 257

EP - 267

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - F9.1

T2 - 2004 MRS Fall Meeting

Y2 - 29 November 2004 through 1 December 2004

ER -

Nucleation and growth processes of silicon nanowires

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