TY - JOUR
T1 - Nucleation Density and Shape of Submonolayer Two-Dimensional Islands of Diphenyl Dinaphthothienothiophene in Vacuum Deposition
AU - Hattori, Yoshiaki
AU - Kimura, Yoshinari
AU - Kitamura, Masatoshi
N1 - Funding Information:
This work was partly supported by a Leading Initiative for Excellent Young Researchers program from the MEXT in Japan, JSPS KAKENHI Grant Nos. 19H02171, 19K15048, and 17H06229, Materials Science Foundation from Hitachi Metals, Research Foundation for the Electrotechnology of Chubu, and Kawanishi Memorial ShinMaywa Education Foundation. The authors also thank Nippon Kayaku Co., Ltd. for supplying us DPh-DNTT.
Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2020/1/9
Y1 - 2020/1/9
N2 - Submonolayer two-dimensional (2D) islands of diphenyl dinaphthothienothiophene with various shapes and densities (N) were formed on a SiO2/Si substrate by controlling substrate temperature and the surface treatment for SiO2 in vacuum deposition to investigate the growth mechanism on the basis of their morphology. The statistical analysis shows that the 2D islands have complex shapes when N is small, and there is a constant relationship between N and the shape complexity of the 2D islands, regardless of the deposition conditions. Because the surface morphology is determined by diffusion coefficients for admolecules on a substrate surface (Ds) and along the edge of a 2D island (Dedg), the relationship between (N, shape complexity) and (Ds, Dedg) is studied. The statistical analysis indicates that Dedg is almost independent of the surface conditions and is instead determined by interactions with molecules constructing the 2D island. Therefore, Dedg is considered as a material-dependent parameter to control the morphology for growing high-quality films in vacuum deposition.
AB - Submonolayer two-dimensional (2D) islands of diphenyl dinaphthothienothiophene with various shapes and densities (N) were formed on a SiO2/Si substrate by controlling substrate temperature and the surface treatment for SiO2 in vacuum deposition to investigate the growth mechanism on the basis of their morphology. The statistical analysis shows that the 2D islands have complex shapes when N is small, and there is a constant relationship between N and the shape complexity of the 2D islands, regardless of the deposition conditions. Because the surface morphology is determined by diffusion coefficients for admolecules on a substrate surface (Ds) and along the edge of a 2D island (Dedg), the relationship between (N, shape complexity) and (Ds, Dedg) is studied. The statistical analysis indicates that Dedg is almost independent of the surface conditions and is instead determined by interactions with molecules constructing the 2D island. Therefore, Dedg is considered as a material-dependent parameter to control the morphology for growing high-quality films in vacuum deposition.
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U2 - 10.1021/acs.jpcc.9b08628
DO - 10.1021/acs.jpcc.9b08628
M3 - Article
AN - SCOPUS:85078258680
SN - 1932-7447
VL - 124
SP - 1064
EP - 1069
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 1
ER -