Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

Hideaki Togashi; Hidehito Asaoka; Tatsuya Yamazaki; Maki Suemitsu

doi:10.1143/JJAP.44.L1377

Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

Hideaki Togashi, Hidehito Asaoka, Tatsuya Yamazaki, Maki Suemitsu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Morphological development of oxide islands on Si(001)-2 × 1 surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of 6.7 × 10^-5 Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.

Original language	English
Pages (from-to)	L1377-L1380
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	42-45
DOIs	https://doi.org/10.1143/JJAP.44.L1377
Publication status	Published - 2005
Externally published	Yes

Keywords

1 surface
Autocatalytic reaction
Critical island size
Island growth
Nucleation
Scanning tunneling microscopy
Si dry oxidation
Si(001)-2 ×

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.L1377

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title = "Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy",

abstract = "Morphological development of oxide islands on Si(001)-2 × 1 surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of 6.7 × 10-5 Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.",

keywords = "1 surface, Autocatalytic reaction, Critical island size, Island growth, Nucleation, Scanning tunneling microscopy, Si dry oxidation, Si(001)-2 ×",

author = "Hideaki Togashi and Hidehito Asaoka and Tatsuya Yamazaki and Maki Suemitsu",

year = "2005",

doi = "10.1143/JJAP.44.L1377",

language = "English",

volume = "44",

pages = "L1377--L1380",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "42-45",

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TY - JOUR

T1 - Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

AU - Togashi, Hideaki

AU - Asaoka, Hidehito

AU - Yamazaki, Tatsuya

AU - Suemitsu, Maki

PY - 2005

Y1 - 2005

N2 - Morphological development of oxide islands on Si(001)-2 × 1 surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of 6.7 × 10-5 Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.

AB - Morphological development of oxide islands on Si(001)-2 × 1 surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of 6.7 × 10-5 Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.

KW - 1 surface

KW - Autocatalytic reaction

KW - Critical island size

KW - Island growth

KW - Nucleation

KW - Scanning tunneling microscopy

KW - Si dry oxidation

KW - Si(001)-2 ×

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M3 - Article

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SN - 0021-4922

VL - 44

SP - L1377-L1380

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 42-45

ER -

Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

Abstract

Keywords

ASJC Scopus subject areas

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