TY - GEN
T1 - Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells
AU - Gao, Bing
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the Japan Society for the Promotion of Science (Grants-in-Aid for Scientific Research, Grant No. 24360012).
Publisher Copyright:
© Springer Japan 2015.
PY - 2015
Y1 - 2015
N2 - Impurities and dislocations in silicon crystals can cause significant deterioration in the conversion efficiency of solar cells. For increasing solar cell efficiency, reduction of impurities and dislocations is necessary. Numerical simulation is a powerful tool for improving the quality of silicon crystal for solar cells. A set of numerical analysis system that includes all processes involved in crystal growth has been developed for studying the carbon and oxygen transport in global furnace, and a three-dimensional Alexander-Haasen model was developed for studying the dislocation multiplication. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost.
AB - Impurities and dislocations in silicon crystals can cause significant deterioration in the conversion efficiency of solar cells. For increasing solar cell efficiency, reduction of impurities and dislocations is necessary. Numerical simulation is a powerful tool for improving the quality of silicon crystal for solar cells. A set of numerical analysis system that includes all processes involved in crystal growth has been developed for studying the carbon and oxygen transport in global furnace, and a three-dimensional Alexander-Haasen model was developed for studying the dislocation multiplication. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost.
KW - Control of dislocation multiplication
KW - Furnace structure and operating conditions optimization
KW - Numerical simulations
KW - Reduction of carbon and oxygen impurities
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U2 - 10.1007/978-4-431-55800-2_5
DO - 10.1007/978-4-431-55800-2_5
M3 - Conference contribution
AN - SCOPUS:84964462318
SN - 9784431557999
T3 - Lecture Notes in Physics
SP - 241
EP - 272
BT - Defects and Impurities in Silicon Materials - An Introduction to Atomic-Level Silicon Engineering
A2 - Yoshida, Yutaka
A2 - Langouche, Guido
PB - Springer Verlag
T2 - 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014
Y2 - 19 October 2014 through 22 October 2014
ER -