We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-Sumino model. It was found that the multiplication of dislocations is higher in fast cooling processes. It was confirmed that residual stress is low at high temperatures because the movement of the dislocations relaxes the thermal strain, while the residual stress increases with decreasing temperature, because of reduced motion of dislocations and formation of a strain field at lower temperatures.
|Journal||International Journal of Photoenergy|
|Publication status||Published - 2013|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)