Abstract
A global simulation model is applied for a silicon carbide growth system heated by induction coils. A finite-volume method (FVM) and a global model are applied to solve the equations for electromagnetic field, conductive and radiative heat transfer. The growth rate is predicted by Hertz-Knudsen equation and onedimensional mass transfer equation. Further, simulations for five different coil positions are carried out to investigate the effects of coil position on temperature distribution in the furnace. The numerical results reveal that the variation of temperature in the radial direction along the substrate surface and the temperature difference between the powder and substrate are greatly affected by the coil position. The predicted growth rate along the substrate surface for five coil positions is also studied. Finally, a reasonable range of coil positions maintaining a balance between large-diameter crystal, high growth rate, temperature limitation of material and lower electrical power consumption is obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 971-975 |
| Number of pages | 5 |
| Journal | Crystal Research and Technology |
| Volume | 42 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2007 Oct |
| Externally published | Yes |
Keywords
- Computer simulation
- Heat transfer
- Induction heating
- Silicon carbide
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics