TY - JOUR
T1 - Numerical simulation of heat and fluid flow in ammonothermal GaN bulk crystal growth process
AU - Masuda, Yoshio
AU - Suzuki, Akira
AU - Ishiguro, Tohru
AU - Yokoyama, Chiaki
PY - 2013/8
Y1 - 2013/8
N2 - A numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed. The autoclave and growing crystal are assumed to be axisymmetric and the raw material is assumed to be a porous medium. Heat transfer by natural convection is discussed in terms of the open-space ratio of the baffle and the height of the crystals. Simulation results show that a larger open-space ratio, at least 30%, is better for the crystal growth from the viewpoints of average surface temperature and flow direction.
AB - A numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed. The autoclave and growing crystal are assumed to be axisymmetric and the raw material is assumed to be a porous medium. Heat transfer by natural convection is discussed in terms of the open-space ratio of the baffle and the height of the crystals. Simulation results show that a larger open-space ratio, at least 30%, is better for the crystal growth from the viewpoints of average surface temperature and flow direction.
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U2 - 10.7567/JJAP.52.08JA05
DO - 10.7567/JJAP.52.08JA05
M3 - Article
AN - SCOPUS:84883168099
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8 PART 2
M1 - 08JA05
ER -