TY - GEN
T1 - Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell
AU - Lee, Ming Yi
AU - Tsai, Yi Chia
AU - Li, Yiming
AU - Samukawa, Seiji
PY - 2016/11/21
Y1 - 2016/11/21
N2 - According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.
AB - According to the Bloch theorem and the symmetry of superlattice configuration, a new 3D finite element method is employed to calculate the miniband structure and density of state for well-aligned Ge/Si QDs array. This method can overcome the approximation of multi-dimensional Kronig-Penny model and constrain on QDs superlattice structure. The interaction of electronic structure among Ge/Si QDs with various density of QDs therough QDs dimension and superlattice structure is investigated to provide a design guideline for QDs solar cell.
UR - http://www.scopus.com/inward/record.url?scp=85006893190&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2016.7751551
DO - 10.1109/NANO.2016.7751551
M3 - Conference contribution
AN - SCOPUS:85006893190
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 361
EP - 364
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -