@article{aec88e27b5314c9cb59f49687f65d131,
title = "Numerical simulation of thermal conductivity of SiNW-SiGe0.3 composite for thermoelectric applications",
abstract = "The electron band structure and phonon energy dispersion of the silicon nanowires (SiNWs) embedded in SiGe0.3 (SiNW-SiGe0.3 composite) are simulated by using the effective mass Schr{\"o}dinger equation and the elastodynamic wave equation, respectively. Then, the TE properties of the SiNW-SiGe0.3 composite are investigated by the Landauer approach. The simulation shows the contribution from electrons/holes on both electrical conductance and thermal conductance increases few times by introducing SiNWs, but on the other hand, lattice thermal conductance reduces around two orders. These results are consistent with the experimental measurement and indicates that much lower lattice thermal conductance dominates the TE performance of the SiNW-SiGe0.3 composite.",
keywords = "Landauer approach, silicon nanowire (SiNW), thermal conductivity",
author = "Lee, {Ming Yi} and Yiming Li and Chuang, {Min Hui} and Daisuke Ohori and Seiji Samukawa",
note = "Funding Information: Manuscript received August 31, 2019; revised December 14, 2019; accepted February 10, 2020. Date of publication March 30, 2020; date of current version April 22, 2020. This work was supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 108-2221-E-009-008 and Grant MOST 108-3017-F-009-001, and in part by the “Center for mmWave Smart Radar Systems and Technologies” under the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan. The review of this article was arranged by Editor R. Venkatasubramanian. (Corresponding author: Yiming Li.) Ming-Yi Lee and Min-Hui Chuang are with the Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = may,
doi = "10.1109/TED.2020.2975079",
language = "English",
volume = "67",
pages = "2088--2092",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}