Observation of a filled electronic state in the conduction band of InN

J. J. Kim; H. Makino; K. Kobayashi; P. P. Chen; E. Ikenaga; M. Kobata; A. Takeuchi; M. Awaji; T. Hanada; M. W. Cho; T. Yao

doi:10.1002/pssc.200565214

Observation of a filled electronic state in the conduction band of InN

J. J. Kim, H. Makino, K. Kobayashi, P. P. Chen, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, T. Hanada, M. W. Cho, T. Yao

IMR - Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.

Original language	English
Pages (from-to)	1846-1849
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565214
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

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title = "Observation of a filled electronic state in the conduction band of InN",

abstract = "We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.",

author = "Kim, {J. J.} and H. Makino and K. Kobayashi and Chen, {P. P.} and E. Ikenaga and M. Kobata and A. Takeuchi and M. Awaji and T. Hanada and Cho, {M. W.} and T. Yao",

year = "2006",

doi = "10.1002/pssc.200565214",

language = "English",

volume = "3",

pages = "1846--1849",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

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TY - JOUR

T1 - Observation of a filled electronic state in the conduction band of InN

AU - Kim, J. J.

AU - Makino, H.

AU - Kobayashi, K.

AU - Chen, P. P.

AU - Ikenaga, E.

AU - Kobata, M.

AU - Takeuchi, A.

AU - Awaji, M.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

PY - 2006

Y1 - 2006

N2 - We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.

AB - We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.

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U2 - 10.1002/pssc.200565214

DO - 10.1002/pssc.200565214

M3 - Conference article

AN - SCOPUS:33746340598

SN - 1862-6351

VL - 3

SP - 1846

EP - 1849

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Observation of a filled electronic state in the conduction band of InN

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