We have investigated the electronic structure of InN epilayers grown by molecular beam epitaxy at different growth temperatures by hard X-ray photoemission spectroscopy. We observed filled electronic states in the conduction band of the InN films. Integral intensity of the filled electronic states developed with decreasing growth temperature. The decreasing growth temperature induced increasing oxygen incorporation into the InN films and increasing carrier concentration and optical band gap of the InN films. Therefore, the filled electronic states should be indicated the filling of carriers in the conduction band caused by oxygen incorporation and the present results support the Burstein-Moss shift.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sept 2