Abstract
The surface state due to dimer dangling bonds on a clean Si(001)2 × 1 surface has been investigated by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES) in which Auger electrons excited by a grazing-incidence electron beam for RHEED are detected. The surface state component was observed for AES spectra of Si LVV. The intensity of the surface state component increased with decreasing the incidence angle of the electron beam. The dependency is discussed in terms of the escape depth of Si LVV Auger electrons and the penetration depth of the primary electron beam of 10 keV.
Original language | English |
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Pages (from-to) | 123-127 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 130-132 |
DOIs | |
Publication status | Published - 1998 Jun |
Keywords
- AES
- Dimer dangling bond
- Disilane
- RHEED
- Si(001)2 × 1
- Surface state