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Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique
Takashi Sekiguchi, Jun Chen, Masami Takase, Naoki Fukata, Naoto Umezawa, Kenji Ohmori, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe, Sciji Inumiya, Yasuo Nara
Research output: Contribution to journal › Conference article › peer-review
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Citation
(Scopus)